Simulation and Design of lnGaAsN-based Heterojunction Bipolar Transistors for Complementary Low-Power Applications
نویسندگان
چکیده
The performance capabilities of Pnp InGaAsN-based heterojunction bipolar transistors (HBT) for use in complementary HBT technology have been theoretically addressed with a twodimensional simulation program based on the drift-diffusion model. Simulation results closely reproduce the DC characteristics experimentally observed from the first demonstrated Pnp AIGaAsAnGaAsN HBT with a current gain of 18 and a turn-on voltage around 0.89 V. Numerous design approaches have been explored to maximize the transistor performances. As a result, a substantial improvement of the DC current gain (by a factor of 2-3) and high-frequency operation performances (with fTand f~Axvalues up to 10 GHz) can be easily achieved with the proper use of varying base thickness X~ and dopant-graded base. The effect of the quatemary band-gap EG value is also addressed. Simulation results show that Pnp device with turn-on Ptzp InGaAsN-based HBT 1
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